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Freescale Semiconductor Technical Data
MRF9030M Rev. 8, 3/2005
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 26 volt base station equipment. * Typical Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 20 dB Efficiency -- 41% (Two Tones) IMD -- -31 dBc * Integrated ESD Protection * Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power * Excellent Thermal Stability * Characterized with Series Equivalent Large-Signal Impedance Parameters * Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface Mount. * N Suffix Indicates Lead-Free Terminations * 200_C Capable Plastic Package * TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. * TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1
945 MHz, 30 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFETs
CASE 1265-08, STYLE 1 TO-270-2 PLASTIC MRF9030NR1(MR1)
CASE 1337-03, STYLE 1 TO-272-2 PLASTIC MRF9030NBR1(MBR1) Symbol VDSS VGS PD Tstg TJ Value -0.5, +65 -0.5, + 15 139 0.93 -65 to +150 200 Unit Vdc Vdc W W/C C C
Table 1. Maximum Ratings
Rating Drain-Source Voltage Gate-Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Symbol RJC Value 1.08 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model MRF9030NR1(MR1) MRF9030NBR1(MBR1) Class 1 (Minimum) M2 (Minimum) C7 (Minimum) C6 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22-A113, IPC/JEDEC J-STD-020 Rating 3 Package Peak Temperature 260 Unit C
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
(c) Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 1
RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (Tc = 25c Unless Otherwise Noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate-Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc
On Characteristics
Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) VGS(th) VGS(Q) VDS(on) gfs 2 3 -- -- 2.9 3.8 0.23 2.7 4 5 0.4 -- Vdc Vdc Vdc S
Dynamic Characteristics
Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 49 27 1.2 -- -- -- pF pF pF
Functional Tests (In Freescale Test Fixture)
Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two-Tone Common-Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Gps 18 20 -- dB
37
41
--
%
IMD
--
-31
-28
dBc
IRL
--
-13
-9
dB
Gps
--
20
--
dB
--
40.5
--
%
IMD
--
-31
--
dBc
IRL
--
-12
--
dB
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 2 RF Device Data Freescale Semiconductor
VGG + C8
B1
B2 VDD + C7 L1 L2 C15 C16 + C17 + C18
RF INPUT
C5 Z1 C1 C2 C3 C4 C6 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 DUT Z11
C9 Z12 Z13 Z14 Z15 Z16 Z17 C14 C10 C11 C12 C13 Z18
RF OUTPUT
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10
0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.200 x 0.270 Microstrip 0.330 x 0.270 Microstrip 0.140 x 0.270 x 0.520, Taper 0.040 x 0.520 Microstrip 0.090 x 0.520 Microstrip 0.370 x 0.520 Microstrip (MRF9030NR1/MR1) 0.290 x 0.520 Microstrip (MRF9030NBR1/MBR1) 0.130 x 0.520 Microstrip (MRF9030NR1/MR1) 0.210 x 0.520 Microstrip (MRF9030NBR1/MBR1)
Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Board
0.360 x 0.270 Microstrip 0.050 x 0.270 Microstrip 0.110 x 0.060 Microstrip 0.220 x 0.060 Microstrip 0.100 x 0.060 Microstrip 0.870 x 0.060 Microstrip 0.240 x 0.060 Microstrip 0.340 x 0.060 Microstrip Taconic RF-35-0300, r = 3.5
Figure 1. 930-960 MHz Broadband Test Circuit Schematic
Table 6. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part B1 B2 C1, C7, C14, C15 C2 C3, C11 C4, C12 C5, C6 C8, C16, C17 C9, C10 C13 C18 L1, L2 WB1, WB2 PCB Description Short Ferrite Bead, Surface Mount Long Ferrite Bead, Surface Mount 47 pF Chip Capacitors 0.6-4.5 Variable Capacitor, Gigatrim 3.9 pF Chip Capacitors 0.8-8.0 Variable Capacitors, Gigatrim 6.8 pF Chip Capacitors 10 F, 35 V Tantulum Chip Capacitors 10 pF Chip Capacitors 1.8 pF Chip Capacitor (MRF9030NR1/MR1) 0.6-4.5 Variable Capacitor, Gigatrim (MRF9030NBR1/MBR1) 220 F Electrolytic Chip Capacitor 12.5 nH Coilcraft Inductors 20 mil Brass Shim (0.250 x 0.250) Etched Circuit Board 95F786 95F787 100B470JP 500X 44F3360 100B3R6BP 500X 44F3360 100B7R5JP 500X 93F2975 100B100JP 500X 100B1R8BP 44F3360 14F185 A04T-5 RF-Design Lab 900 MHz 250/Viper Rev 02 Part Number Manufacturer Newark Newark ATC Newark ATC Newark ATC Newark ATC ATC Newark Newark Coilcraft RF-Design Lab DSelectronics
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 3
C18
C8 VGG
B1 C7 C15 B2 C16 C17
VDD
C1 C2
L1 C3
C5 CUT OUT AREA C4 WB1 C6
C9 WB2 C10
L2
C14
C11
C12
C13
900 MHz Rev 02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030NR1/MR1)
C18 B2 VDD C7 C15 L1 C1 C2 C3 C5 WB1 CUT OUT AREA C4 C6 WB2 C9 C10 L2 C14 C11 C12 C13 C16 C17
C8 VGG
B1
MRF9030M
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030NBR1/MBR1)
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
h , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) -10 -12 -14 -16 -18 22 21 G ps , POWER GAIN (dB) 20 19 18 17 16 15 14 930 935 940 IRL VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two-Tone, 100 kHz Tone Spacing 945 950 955 f, FREQUENCY (MHz) IMD Gps 50 45 40 35 -30 -32 -34 -36
-38 960
Figure 4. Class AB Broadband Circuit Performance
IMD, INTERMODULATION DISTORTION (dBc)
21.5 21 G ps , POWER GAIN (dB) 20.5 20 300 mA 250 mA 200 mA VDD = 26 Vdc f1 = 945 MHz f2 = 945.1 MHz 1 10 100
-15 -20 -25 -30 -35 -40 -45 -50 -55 250 mA 0.1 1 IDQ = 200 mA 300 mA VDD = 26 Vdc 375 mA f1 = 945 MHz f2 = 945.1 MHz 10 100
IDQ = 375 mA
19.5 19
18.5 0.1
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Power Gain versus Output Power
Figure 6. Intermodulation Distortion versus Output Power
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 -40 -50 -60 -70 -80 0.1
G ps , POWER GAIN (dB)
3rd Order
18 16 14 12 10 0.1 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz 1 10
40 30 20 10 0 100
5th Order 7th Order
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) AVG.
Figure 7. Intermodulation Distortion Products versus Output Power
Figure 8. Power Gain and Efficiency versus Output Power
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 5
, DRAIN EFFICIENCY (%)
VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz
22 20 Gps
IRL, INPUT RETURN LOSS (dB)
60 50
20 G ps , POWER GAIN (dB) 18
Gps
40 20 0 -20 -40 -60 100
16 14 12 10 0.1 IMD 1 10
VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz f2 = 945.1 MHz
Pout, OUTPUT POWER (WATTS) PEP
Figure 9. Power Gain, Efficiency and IMD versus Output Power
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 6 RF Device Data Freescale Semiconductor
, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
22
60
Zo = 5 Zsource f = 930 MHz f = 960 MHz Zload f = 960 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz 930 945 960 Zsource 1.07 + j0.160 1.14 + j0.385 1.17 + j0.170 Zload 3.53 - j0.20 3.41 - j0.24 3.60 - j0.17
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Note:
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance (MRF9030NR1/MR1)
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 7
Zo = 5 Zsource f = 960 MHz Zload f = 960 MHz
f = 930 MHz
f = 930 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 Watts (PEP) f MHz 930 945 960 Zsource 1.0 - j0.18 1.0 - j0.10 1.0 - j0.03 Zload 3.05 - j0.09 3.00 - j0.07 2.95 - j0.03
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Zload was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion.
Note:
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance (MRF9030NBR1/MBR1)
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 8 RF Device Data Freescale Semiconductor
NOTES
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
B E1 E4 aaa D aaa
M M 2X
D3
2X
PIN ONE ID
DA
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa INCHES MIN MAX .078 .082 .039 .043 .040 .042 .416 .424 .378 .382 .290 .320 .016 .024 .436 .444 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.98 2.08 0.99 1.09 1.02 1.07 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 11.07 11.28 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 0.64 BSC 4.90 5.06 0.18 0.28 0.10
DA
2X
b1
D1
E
A
E5 E3
EXPOSED HEATSINK AREA PIN 1
PIN 2
D2
PIN 3
c1 H A1 A2
DATUM PLANE
NOTE 7
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 10 RF Device Data Freescale Semiconductor
CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC
BOTTOM VIEW F
ZONE J
A E2 E5
2X
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
D
CASE 1265-08 ISSUE G TO-270-2 PLASTIC MRF9030NR1(MR1)
2X
aaa
M
r1 CAB
DRAIN ID
B
E1
A
GATE LEAD
DRAIN LEAD
D1
2X
b1 aaa
M
CA
D
2
E
c1
H
DATUM PLANE
F ZONE "J"
A
A1 A2 7 Y E2 Y
SEATING PLANE
C
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DATUM PLANE -H- IS LOCATED AT THE TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETERMINED AT DATUM PLANE -H-. 5. DIMENSION "b1" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE "b1" DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. CROSSHATCHING REPRESENTS THE EXPOSED AREA OF THE HEAT SLUG. DIM A A1 A2 D D1 E E1 E2 F b1 c1 r1 aaa INCHES MIN MAX .100 .104 .039 .043 .040 .042 .928 .932 .810 BSC .438 .442 .248 .252 .241 .245 .025 BSC .193 .199 .007 .011 .063 .068 .004 MILLIMETERS MIN MAX 2.54 2.64 0.99 1.09 1.02 1.07 23.57 23.67 20.57 BSC 11.12 11.23 6.30 6.40 6.12 6.22 0.64 BSC 4.90 5.05 .18 .28 1.60 1.73 .10
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 1337-03 ISSUE B TO-272-2 PLASTIC MRF9030NBR1(MBR1)
MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1 RF Device Data Freescale Semiconductor 11
EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE EEEE
E2 VIEW Y-Y
PIN 3
1
NOTE 8
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MRF9030NR1 MRF9030NBR1 MRF9030MR1 MRF9030MBR1
Document Number: MRF9030M Rev. 8, 3/2005
12
RF Device Data Freescale Semiconductor

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